PART |
Description |
Maker |
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1 |
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package 600V Single N-Channel HEXFET Power MOSFET in a I-Pak package SMPS MOSFET Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
|
IRF[International Rectifier]
|
STD2HNK60Z STD2HNK60Z-1 STQ2HNK60ZR-AP STF2HNK60Z |
0.5 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 TO-92, 3 PIN N-channel 600V - 4.4楼? - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH垄芒 Power MOSFET N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH?/a> Power MOSFET N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET N-channel 600V - 4.4ヘ - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH⑩ Power MOSFET
|
ST Microelectronics STMicroelectronics
|
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W 600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
STSJ2NM60 |
N-CHANNEL 600V - 2.8 OHM - 2A POWER SO-8 ZENER-PROTECTED MDMESH POWER MOSFET N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh⑩ POWER MOSFET N-CHANNEL 600V - 2.8ohm - 2A PowerSO-8 Zener-Protected MDmesh POWER MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
EVK75-050 2DI75S050A |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C) 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600V的五(巴西)总裁| 75
|
Analog Devices, Inc.
|
IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module (DISCRETE/OPTO)
|
Toshiba Semiconductor
|